| PART |
Description |
Maker |
| EM78P153E EM78P153EN EM78P153EP |
EM78P153E is an 8-bit microprocessor with low-power and high-speed CMOS technology EM78P153E是一位低功耗和高速CMOS技术的微处理器
EM78P153E is an 8-bit microprocessor with low-power and high-speed CMOS technology
|
ELAN Microelctronics Corp .
Elan Microelectronics, Corp.
ELAN Microelectronics Corp
|
| AIGW50N65H5 |
High speed fast IGBT in TRENCHSTOPTM 5 technology
|
Infineon Technologies A...
|
| IGW25N120H3 |
High speed IGBT in Trench and Fieldstop technology
|
Infineon Technologies AG
|
| IGW20N60H3 |
High speed IGBT in Trench and Fieldstop technology
|
Infineon Technologies A...
|
| SKW30N60HS Q67040-S4503 |
From old datasheet system
HIGH SPEED IGBT IN NPT-TECHNOLOGY
|
INFINEON[Infineon Technologies AG]
|
| EM78P447SAP |
8-bit microprocessor with low-power and high-speed CMOS technology
|
ELAN Microelectronics Corp
|
| EM78P153E EM78P153EN EM78P153EP |
EM78P153E is an 8-bit microprocessor with low-power and high-speed CMOS technology
|
ELAN Microelectronics Corp
|
| SGW30N60HS |
High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SKW20N60HS SKW20N60HS08 |
High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGW50N60HS SGW50N60HS09 |
High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| VSMY2853G VSMY2853RG |
High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology
Miniature light barrier
|
Vishay Siliconix
|
| PG-TO220-3-FP IKA08N65H5 |
High speed 5 IGBT in TRENCHSTOP 5 technology copacked with RAPID 1 fast and soft anti parallel diode
|
Infineon Technologies AG
|
